Back-end-of-line (beol) interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJOUNG-WEI LIOU, KENG-CHU LIN
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Abstract
A method of fabricating an interconnect structure on a wafer and an interconnect structure are provided. A dielectric layer is provided on the wafer, with the dielectric layer having a recess therein. A silicon (Si) layer is deposited in the recess. An interconnect is formed by providing a barrier layer and a conductive layer in the recess over the Si layer. The Si layer has a density that prevents or substantially prevents the barrier layer from moving away from the conductive layer and towards the dielectric layer during subsequent processing of the interconnect structure.
Claims20
A method of fabricating an interconnect structure on a wafer, the method comprising:
- providing a dielectric layer on the wafer, the dielectric layer having a recess therein;
- depositing a silicon (Si) layer in the recess;
- forming an interconnect by providing a barrier layer and a conductive layer in the recess over the Si layer;
- forming a nitride layer in a first portion of the Si layer that is adjacent to a top surface of the dielectric layer;
- and
- forming an oxide layer in a second portion of the Si layer that is adjacent to the first portion.
An interconnect structure, the interconnect structure comprising:
- a dielectric layer, the dielectric layer having a recess therein;
- a silicon (Si) layer that is deposited in the recess;
- and
- an interconnect including a barrier layer and a conductive layer that are provided in the recess over the Si layer;
- a nitride layer that is formed in a first portion of the Si layer that is adjacent to a top surface of the dielectric layer;
- and
- an oxide layer that is formed in a second portion of the Si layer that is adjacent to the first portion of the Si layer.
A method of fabricating an interconnect structure on a wafer, the method comprising:
- providing a dielectric layer on the wafer, the dielectric layer having a recess therein;
- depositing a silicon layer in the recess;
- forming an interconnect by providing a barrier layer and a conductive layer in the recess over the silicon layer;
- using a nitrogen plasma treatment to transform an upper portion of the silicon layer into a silicon nitride layer;
- and
- using ultraviolet (UV) curing to transform a lower portion of the silicon layer into a silicon oxide layer.
Dependencies are inferred from the claim text.