Method for manufacturing semiconductor device, ion beam etching device, and control device

An ion beam etching device comprising:

• a plasma generation chamber;
• a treatment chamber configured to process a substrate;
• a grid provided between the treatment chamber and the plasma generation chamber, and for forming an ion beam by drawing ion from the plasma generation chamber;
• a gas introduction unit for introducing discharge gas into the plasma generation chamber;
• an exhaust means for exhausting the treatment chamber;
• a substrate holder in which a substrate provided in the treatment chamber is placed;
• a control unit configured to receive a measurement result of an in-plane film thickness distribution before the substrate is processed;
• and
• an electromagnetic coil provided outside of the plasma generation chamber and provided in a ceiling portion opposite to the grid of the plasma generation chamber, wherein
• the electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, current values applied to the outer coil and the inner coil can be independently controlled, and
• the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result received by the control unit.