Methods of forming a semiconductor device with a spacer etch block cap and the resulting device
AssigneeGlobalfoundries Inc.
InventorsDaniel T. Pham, Hyun-Jin Cho, Ruilong Xie
Life of this patent
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Abstract
One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor substrate, forming a sidewall spacer adjacent opposite sides of the sacrificial gate structure, removing the sacrificial gate structure and forming a replacement gate structure in its place, at some point after forming the replacement gate structure, performing an etching process to reduce the height of the spacers so as to thereby define recessed spacers having an upper surface that partially defines a spacer recess, and forming a spacer etch block cap on the upper surface of each recessed spacer structure and within the spacer recess.
Claims19
A method of forming a transistor device, comprising:
- forming a sacrificial gate structure above a semiconductor substrate;
- forming a sidewall spacer adjacent opposite sides of said sacrificial gate structure, said spacers having a height;
- removing said sacrificial gate structure and forming a replacement gate structure in its place;
- at some point after forming said replacement gate structure, performing an etching process to reduce said height of said spacers so as to thereby define recessed spacers having an upper surface that partially defines a spacer recess;
- and
- forming a spacer etch block cap on said upper surface of each recessed spacer structure and within said spacer recess.
A method of forming a transistor device, comprising:
- forming a sacrificial gate structure above a semiconductor substrate;
- forming a sidewall spacer adjacent opposite sides of said sacrificial gate structure, said spacers having a height;
- forming a first layer of insulating material above said substrate;
- removing said sacrificial gate structure so as to thereby define a replacement gate cavity;
- forming a replacement gate structure in said replacement gate cavity;
- forming a gate cap layer above said replacement gate structure;
- after forming said gate cap layer, performing an etching process to reduce said height of said spacers so as to thereby define recessed spacers with a spacer recess formed thereabove, wherein said spacer recess is defined by an upper surface of said recessed spacer, said first layer of insulating material and said gate cap layer;
- and
- forming a spacer etch block cap on said upper surface of each recessed spacer structure and within said spacer recess.
A transistor device, comprising:
- a gate structure positioned above a semiconductor substrate;
- a spacer positioned adjacent opposite sides of said gate structure, said spacers having an upper surface;
- a gate cap layer positioned above said gate structure, wherein an upper surface of said gate cap layer is positioned above said upper surface of said spacers;
- a first layer of insulating material positioned above said substrate, wherein an upper surface of said first layer of insulating material is substantially planar with said upper surface of said gate cap layer and wherein said upper surface of said spacer, said first layer of insulating material and said gate cap layer define a spacer recess above each of said spacers;
- and
- a spacer etch block cap positioned on said upper surface of each spacer and within said spacer recess.
Dependencies are inferred from the claim text.