Method for manufacturing sic substrate
AssigneeShowa Denko K.K.
InventorYuzo SASAKI
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Abstract
A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.
Claims12
A method for manufacturing a SiC substrate, comprising:
- a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface;
- a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing;
- and
- a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.
A method for manufacturing a SiC substrate, comprising:
- a sacrificial film-forming process of forming a sacrificial film while adjusting a film thickness of the sacrificial film in order for the entirety of a surface of the sacrificial film to be located at a position higher than a position of the most protruding portion on a surface of a SiC substrate when forming the sacrificial film on the surface of the SiC substrate;
- a sacrificial film planarization process of planarizing the surface of the sacrificial film by mechanical processing;
- and
- a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.
Dependencies are inferred from the claim text.