Method for manufacturing oxide
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
An oxide that can be used as a semiconductor of a transistor or the like is manufactured. In particular, an oxide having few defects such as grain boundaries is manufactured. By a magnetron sputtering method in which a magnetic field containing a component in a direction parallel to a substrate is applied, the magnetic field includes a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G, and a target is a crystal body or a polycrystalline body, a crystal in the crystal body or the polycrystalline body is made to have a pellet-like shape, fly in plasma, and be stacked on a formation surface to be arranged parallel or substantially parallel to the formation surface.
Claims13
A method for manufacturing an oxide, comprising the step of:
- by a magnetron sputtering method in which a magnetic field containing a component in a direction parallel to a substrate is applied, the magnetic field comprises a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G, and a target is a crystal body or a polycrystalline body, making a crystal in the crystal body or the polycrystalline body have a pellet-like shape, fly in plasma, and be stacked on a formation surface to be arranged parallel or substantially parallel to the formation surface.
A method for manufacturing an oxide,
- wherein the oxide is formed by a magnetron sputtering method,
- wherein the magnetron sputtering method comprises a first step and a second step,
- wherein a magnetic field containing a component in a direction parallel to a top surface of a substrate is applied in the first step and the second step,
- wherein a target used in the magnetron sputtering method comprises a region with a polycrystalline structure,
- wherein the target is placed to face the substrate,
- wherein the target comprises a crystal grain,
- wherein in the first step, the crystal grain has a pellet-like shape and flies in plasma, and
- wherein in the second step, the crystal grain having the pellet-like shape is stacked on the top surface of the substrate to be arranged parallel or substantially parallel to the top surface.
A method for manufacturing an oxide with a sputtering apparatus, comprising a first step, a second step, and a third step,
- wherein the sputtering apparatus comprises a target, a substrate, and a magnet unit,
- wherein the target comprises indium, zinc, oxygen, and an element M selected from the group consisting of aluminum, gallium, yttrium, and tin,
- wherein the target comprises a region with a polycrystalline structure,
- wherein the target is placed to face the substrate,
- wherein the magnet unit is placed on a back side of the target and comprises a first magnet whose N pole is on the target side, a second magnet whose S pole is on the target side, and a base,
- wherein a magnetic field is formed between the first magnet and the second magnet,
- wherein the first step comprises a step in which the substrate and the magnet unit are moved or rotated relatively,
- wherein the first step comprises a step in which a potential difference is applied between the target and the substrate to generate plasma,
- wherein the first step comprises a step in which an ion generated in the plasma is made to collide with a front side of the target to separate a flat-plate oxide,
- wherein the flat-plate oxide comprises:
- a first layer comprising the element M, zinc, and oxygen;
- a second layer comprising indium and oxygen;
- and a third layer comprising the element M, zinc, and oxygen,
- wherein the second step comprises a step in which the flat-plate oxide is negatively charged by passing through the plasma and then approaches a top surface of the substrate while maintaining a crystal structure,
- wherein the third step comprises a step in which the flat-plate oxide moves over the top surface of the substrate and is then deposited by an effect of the magnetic field and a current flowing from the substrate toward the target.
A method for manufacturing an oxide, comprising the steps of:
- applying a magnetic field containing a component in a direction parallel to a surface of a substrate facing a target, the target being a crystal body or a polycrystalline body, wherein the magnetic field comprises a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G;
- and
- stacking a crystal having a pellet-like shape in the crystal body or the polycrystalline body on the surface of the substrate by magnetron sputtering, the crystal having the pellet-like shape flying in a plasma and then being arranged parallel or substantially parallel to the surface of the substrate.
Dependencies are inferred from the claim text.