Methods of forming epitaxial semiconductor cladding material on fins of a finfet semiconductor device
AssigneeGLOBALFOUNDRIES Inc.
InventorsYi Qi, Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Murat Kerem Akarvardar, David Paul Brunco
Life of this patent
Estimating the term…
Abstract
One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate and performing an epitaxial deposition process using a combination of silane (SiH4), dichlorosilane (SiH2Cl2), germane (GeH4) and a carrier gas to form an epi semiconductor material around the fin, wherein the flow rate of dichlorosilane used during the epitaxial deposition process is equal to 10-90% of the combined flow rate of silane and dichlorosilane.
Claims27
A method of forming a FinFET device, comprising:
- forming a fin in a semiconductor substrate;
- and
- performing an epitaxial deposition process using a combination of silane (SiH4), dichlorosilane (SiH2Cl2), germane (GeH4) and a carrier gas to form an epi semiconductor material around said fin, wherein the flow rate of dichlorosilane used during said epitaxial deposition process is equal to 10-90% of the combined flow rate of silane and dichlorosilane.
A method of forming a FinFET device, comprising:
- forming a fin in a (100) silicon substrate, wherein a long axis of said fin is oriented in a <110> crystallographic direction of said substrate;
- and
- performing an epitaxial deposition process using a combination of silane (SiH4), dichlorosilane (SiH2Cl2), germane (GeH4) and hydrogen to form a silicon germanium (Si(1-x)Gex) epi semiconductor material around said fin, wherein the flow rate of dichlorosilane used during said epitaxial deposition process is equal to 10-90% of the combined flow rate of silane and dichlorosilane.
A method of forming a FinFET device, comprising:
- forming a fin in a semiconductor substrate;
- and
- performing a sequential epitaxial deposition process to form an epi semiconductor material around said fin, wherein said sequential deposition process comprises:
- performing at least one first deposition process using one of silane (SiH4) or dichlorosilane (SiH2Cl2) in combination with germane (GeH4) and a carrier gas to form a first portion of said epi semiconductor material;
- and
- after completing said first deposition process, performing at least one second deposition process using the other of silane (SiH4) or dichlorosilane (SiH2Cl2) in combination with germane (GeH4) and a carrier gas to form a second portion of said epi semiconductor material on said first portion of said epi semiconductor material.
Dependencies are inferred from the claim text.