Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same

A method of epitaxially forming a semiconductor layer in a recess, the method comprising:

• forming a recess in a semiconductor substrate;
• cleaning the recess, wherein the cleaning produces at least one fissure extending from a surface of the recess into the semiconductor substrate;
• providing a chemical vapor deposition system;
• placing the semiconductor substrate having the recess and the at least one fissure into the chemical vapor deposition system;
• epitaxially forming a liner comprising a first semiconductor material having a first dopant concentration within the recess and over the at least one fissure;
• and
• epitaxially forming a semiconductor layer comprising a second semiconductor material having a second dopant concentration over the liner, wherein the first dopant concentration is lower than the second dopant concentration.

A semiconductor device, comprising:

• a semiconductor substrate having a recess and at least one fissure extending from a surface of the recess into the semiconductor substrate;
• a liner comprising a first semiconductor material within the recess and over the at least one fissure;
• and
• a semiconductor layer comprising a second semiconductor material disposed over the liner.