Wafer, a method for processing a wafer, and a method for processing a carrier

A method for processing a carrier, the method comprising:

• forming a hollow chamber within the carrier, the hollow chamber being covered by a cap region, wherein the cap region is supported via a plurality of support structure elements extending within the hollow chamber, wherein the plurality of support structure elements are spaced apart from each other with a first pitch;
• processing a plurality of processing areas in the cap region, wherein the plurality of processing areas are spaced apart from each other with a second pitch, wherein the first pitch of the plurality of support structure elements is less than the second pitch of the plurality of processing areas.

A wafer comprising:

• a hollow chamber within the wafer and a support structure extending within the hollow chamber, the hollow chamber being covered by a cap region, wherein the cap region is supported by the support structure, and wherein the hollow chamber undermines more than 80% of a processing surface of the wafer.