IN-SITU OXIDIZED NiO AS ELECTRODE SURFACE FOR HIGH k MIM DEVICE

Abstract

A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1<x≦1.5, and a high k dielectric material in contact with the electrode. The structure may have a further electrode in contact with the high k dielectric material, to form a metal-insulator-metal (MIM) capacitor, e.g., including a bottom electrode comprising NiOx wherein 1<x≦1.5, a high k dielectric material overlying the bottom electrode, and a top electrode comprising NiOx wherein 1<x≦1.5. The NiOx electrodes in such applications are oxide-stable, high work function electrodes that avoid deterioration of work function and conductivity during electronic device fabrication involving elevated temperature annealing

Dependencies are inferred from the claim text.