Memory devices configured to apply different weights to different strings of memory cells coupled to a data line and methods

A memory device, comprising:

• a memory array comprising memory cells coupled to a plurality of data lines;
• wherein the memory device is configured to compare input data to data stored in the memory cells coupled to the data lines;
• wherein the memory device is configured to compare respective representations of levels of current in the data lines to a reference;
• wherein the memory device is configured to determine that the input data potentially matches the data stored in the memory cells coupled to a particular one of the data lines in response to the representation of the level of current in that data line being less than the reference;
• and
• wherein the memory device is configured to determine that the input data does not match the data stored in the memory cells coupled to a particular data line in response the representation of the level of current in that data line being greater than the reference.

A memory device, comprising:

• a memory array comprising first and second strings of memory cells coupled to a data line;
• wherein the memory device is configured to selectively apply a first weight factor to the first string of memory cells and to selectively to apply a second weight factor to the second string of memory cells;
• wherein the memory device is configured to compare a first bit of input data to a first bit of data that is stored in the first string of memory cells while the first weight factor is applied to the first string of memory cells;
• and
• wherein the memory device is configured to compare a second bit of the input data to a second bit of the data that is stored in the second string of memory cells while the second weight factor is applied to the second string of memory cells.