Nonvolatile memory device, storage device having the same, and operation and read methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSUNG-WON YUN
Life of this patent
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Abstract
A method is for operating a nonvolatile memory device. The nonvolatile memory device includes at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate. The method includes applying a word line voltage needed for an operation to a first word line among the word lines, applying a recovery voltage higher than a ground voltage to the first word line after the operation, and then floating the first word line.
Claims30
A method of operating a nonvolatile memory device which includes at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate, the method comprising:
- applying a word line voltage needed for an operation to a first word line among the word lines;
- applying a recovery voltage higher than a ground voltage to the first word line after the operation;
- and then
- floating the first word line.
A method of operating a nonvolatile memory device which includes a first string and a second string connected to a bit line, the first string including a first string selection transistor connected to a first string selection line, the second string including a second string selection transistor connected to a second string selection line, and each of the first string and the second string including a plurality of memory cells connected in series, each the plurality of memory cells connected to word lines and stacked in a direction perpendicular to a substrate, the method comprising:
- applying at least one word line voltage needed for an operation to the word lines;
- applying at least one recovery voltage higher than a ground voltage to the word lines;
- discharging the first string selection line from a first voltage to a second voltage during the applying the at least one recovery voltage;
- and
- floating the word lines.
A nonvolatile memory device comprising:
- a memory cell array including a plurality of strings connected to a bit line, each of the plurality of strings including a plurality of memory cells connected in series, each the plurality of memory cells connected to word lines and stacked in a direction perpendicular to a substrate;
- and
- a control logic configured to apply a word line voltage needed for an operation to a first word line among the word lines, to apply a recovery voltage higher than a ground voltage to the first word line after the operation, and then to float the first word line.
A storage device comprising:
- a nonvolatile memory device including a plurality of strings connected to a bit line, each of the plurality of strings including a plurality of memory cells connected in a series, each the plurality of memory cells connected to word lines and stacked in a direction perpendicular to a substrate;
- and
- a memory controller configured to control the nonvolatile memory device;
- wherein the nonvolatile memory device is configured to apply a word line voltage needed for an operation to a first word line among the word lines, to apply a recovery voltage higher than a ground voltage to the first word line after the operation, and then to float the first word line.
Dependencies are inferred from the claim text.