Resistive ram, method for fabricating the same, and method for driving the same
AssigneesSK hynix Inc., Gwangju Institute of Science and Technology
InventorsHyun-Sang HWANG, Xinjun LIU, Myung-Woo SON
Life of this patent
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Abstract
A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
Claims6
1-15. (canceled)
A method for driving a resistive random access memory (ReRAM) which includes a first electrode, a threshold switching layer of stoichiometric transition oxide formed over the first electrode, a resistance change layer of a non-stoichiometric transition metal oxide formed over the threshold switching layer, and a second electrode formed over the resistance change layer, the method comprising;
- applying a first voltage to turn on the threshold switching layer and to change the resistance change layer from a high resistance state to a low resistance state;
- turning off the threshold switching layer by reducing the first voltage;
- applying a second voltage having an opposite polarity of the first voltage to turn on the threshold switching layer and to change the resistance change layer from a low resistance state to a high resistance state;
- and
- turning off the threshold switching layer by reducing the second voltage.
Dependencies are inferred from the claim text.