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US 2015/0318040 A1Published application
Joint short-time and long-time storage device and storage method thereof
AssigneeHuazhong University of Science and Technology
InventorsXiangshui MIAO, Yi LI, Yingpeng ZHONG, Lei XU, Huajun SUN, Xiaohua XU
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Abstract
A joint short-time and long-time storage device, including a first electrode layer, a functional material layer connected to the first electrode layer, and a second electrode layer connected to the functional material layer. The first electrode layer is made of inert conductive metal, the second electrode layer is made of active conductive metal, and the functional material layer is made of chalcogenide.
Claims19
A storage device, comprising:
- a first electrode layer, a functional material layer connected to the first electrode layer, and a second electrode layer connected to the functional material layer;
- wherein the first electrode layer is made of inert conductive metal, the second electrode layer is made of active conductive metal, and the functional material layer is made of chalcogenide.
A storage method, comprising:
- 1) applying a pulse signal between a first electrode layer and a second electrode layer;
- 2) controlling voltage between the first electrode layer and the second electrode layer to equal a first write pulse so that a storage device switches from a high impedance state to a volatile low impedance state and recovers from the volatile low impedance state to the high impedance state after a forgetting time, thereby enabling short-time storage;
- and
- 3) controlling voltage between the first electrode layer and the second electrode layer to equal a second write pulse so that the storage device switches from the high impedance state to a non-volatile low impedance state, thereby enabling long-time storage.
1 more element
Dependencies are inferred from the claim text.