Phase change memory stack with treated sidewalls
AssigneeMicron Technology, Inc.
InventorsYongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
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Abstract
Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.
Claims21
A method for fabricating a memory stack, the method comprising:
- forming the memory stack out of a plurality of elements;
- and
- forming a sidewall liner on a sidewall of the memory stack using a physical vapor deposition (PVD) process including an adhesion species and a dielectric such that the adhesion species intermixes with an element of the memory stack.
A method for fabricating a memory device comprising:
- forming a plurality of memory stacks, each memory stack formed by:
- forming a first carbon electrode over a word line material;
- forming a selector device material over the first carbon electrode;
- forming a second carbon electrode over the selector device material;
- forming a phase change material over the second carbon electrode;
- and
- forming a third carbon electrode over the phase change material;
- and
- forming a liner material on sidewalls of each memory stack using a radio frequency (RF) physical vapor deposition (PVD) process comprising an adhesion species and a dielectric such that the adhesion species intermixes with the carbon of the electrodes at an interface of the liner material and the sidewalls and the adhesion species and dielectric comprise the liner material.
A memory system comprising:
- a controller to control the system;
- and
- a memory device, coupled to the controller, the memory device comprising:
- a memory stack comprising:
- a first carbon electrode;
- a selector device on the first carbon electrode;
- a second carbon electrode on the selector device;
- a phase change material on the second carbon electrode;
- and
- a third carbon electrode on the phase change material;
- and
- a sidewall liner material on sidewalls of the memory stack wherein the sidewall liner comprises a physical vapor deposited BNX such that the boron is configured to intermix with the carbon of the electrodes at an interface of the sidewall liner material and the sidewalls.
Dependencies are inferred from the claim text.