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US 2015/0318028 A1Published application
Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorKyo-min SOHN
Life of this patent
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Abstract
A semiconductor memory device includes a plurality of memory banks in a first region, a data terminal to which an input data signal is input, the data terminal being in a second region, and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks.
Claims11
-13. (canceled)
A semiconductor memory device, comprising:
- a plurality of memory banks each including a memory cell array;
- a data terminal to which a first data signal is input;
- an inverting circuit corresponding to each memory bank, wherein the inverting circuit inverts or non-inverts the first data signal in response to an inversion control signal indicating whether the first data signal has been inverted to obtain a second data signal and outputs the second data signal;
- and
- a write driving circuit corresponding in a one-to-one manner to the inverting circuit, wherein the write driving circuit drives an input/output line according to the second data signal to write the second data signal to the memory cell array of a corresponding memory bank.
2 more elements
-30. (canceled)
Dependencies are inferred from the claim text.