Non-volatile memory using bi-directional resistive elements
AssigneeNXP USA, Inc.
InventorFRANK K. BAKER, JR.
Life of this patent
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Abstract
A memory cell includes a first storage node and a second storage node that is complementary to the first storage node. A first bidirectional resistive memory element (BRME) includes a first terminal, a second BRME includes a first terminal. A first access transistor couples the first storage node to a first bit line. A second access transistor couples the second storage node to a second bit line. A third transistor couples the first terminal of the first BRME to the second bit line. A fourth transistor couples the first terminal of the second BRME to the first bit line.
Claims20
A memory cell comprising:
- a first storage node;
- a second storage node, the second storage node complementary to the first storage node;
- a first bidirectional resistive memory element (BRME) including a first terminal;
- a second BRME including a first terminal;
- a first access transistor for coupling the first storage node to a first bit line;
- a second access transistor for coupling the second storage node to a second bit line;
- a third transistor for coupling the first terminal of the first BRME to the second bit line;
- a fourth transistor for coupling the first terminal of the second BRME to the first bit line.
A method of operating a memory cell, the memory cell including a first bidirectional resistive memory element (BRME) and a second BRME, the method comprising:
- performing a resistive element write to write a value to the memory cell, the performing including coupling a first terminal of the first BRME to a first bit line and a second terminal of the first BRME to a second bit line to place the first BRME in a first resistive state, the second bit line is a complimentary bit line to the first bit line, the performing including coupling a first terminal of the second BRME to the second bit line and a second terminal of the second BRME to the first bit line to place the second BRME in a second resistive state, the second resistive state being complementary to the first resistive state, the first BRME being in the first resistive state and the second BRME being in the second resistive state is indicative of the value.
Dependencies are inferred from the claim text.