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US 2015/0317203 A1Published application
Code-Based Read Control for Data Storage Devices
AssigneeHongchao Zhou
InventorHongchao Zhou
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Abstract
A method is introduced for improving the data reliability of a memory device by jointly designing error-correcting codes and the reading process. In this method, simple and efficient error-correcting codes with a constant-composition part are designed for encoding data, and when reading data from memory cells, the reading reference levels may be dynamically adjusted based on the constant-composition information, which reduces the reading latency and improves the reading accuracy.
Claims17
A data storage device comprising:
- an encoder configured to map stored data to the discrete levels of a plurality of cells, such that, among this set of cells or a given subset of the cells, the number of cells above a (or each) discrete level is predetermined;
- and
- a reading control unit configured to assign reference voltages for a plurality of cells, such that, among this set of cells or the given subset of the cells, the number of cells having a threshold voltage above the (or each) assigned reference voltage is equal to or close to the predetermined value.
A method comprising:
- encoding the data such that, for a given set of the programmed cells, the number of cells in each (or some) state and the states above is equal to a specified constant;
- and
- determining a set of reference voltages such that, in the given set of cells, the number of cells having a voltage above each (or some) reference voltage is equal to or close to one of the specified constants;
- and
- reading data based on this set of reference voltages and decoding data.
2 more elements
Dependencies are inferred from the claim text.