Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasami JINTYOU, Yamato AIHARA
Life of this patent
Estimating the term…
Abstract
It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.
Claims24
(canceled)
An active matrix display device comprising:
- a backlight configured to emit light;
- and
- a pixel over the backlight, the pixel comprising:
- a reflective electrode comprising an opening;
- and
- a liquid crystal element over the reflective electrode,
- wherein the opening is configured to transmit light emitted from the backlight.
An active matrix display device comprising:
- a backlight configured to emit light;
- and
- a pixel over the backlight, the pixel comprising:
- a reflective electrode comprising a plurality of openings;
- and
- a liquid crystal element over the reflective electrode,
- wherein the plurality of openings is configured to transmit light emitted from the backlight.
An active matrix display device comprising:
- a backlight configured to emit light;
- and
- a thin film transistor over an insulating surface;
- a reflective electrode electrically connected to the thin film transistor, the reflective electrode comprising an opening;
- and
- a liquid crystal element over the reflective electrode,
- wherein the opening is configured to transmit light emitted from the backlight.
Dependencies are inferred from the claim text.