Semiconductor apparatus, display panel, and method of manufacturing semiconductor apparatus

A semiconductor apparatus comprising:

• a substrate;
• a plurality of gate lines located on the substrate;
• a gate insulating film covering the gate lines;
• a semiconductor layer having portions that overlie the gate lines, with the gate insulating film positioned in between;
• a plurality of source lines located on the gate insulating film and each covering portions of the semiconductor layer to cross the gate lines;
• a plurality of drain lines located on the gate insulating film and each covering a portion of the semiconductor layer so as to be spaced apart from one of the source lines across a portion of the semiconductor layer and overlie one of the gate lines;
• thin film transistors each including a channel region located over a portion of the semiconductor layer between a source line and a drain line;
• a drain connecting film made of a portion of a metal film for electrically connecting to a drain line via a first contact hole that extends through a first interlayer insulating film and a planarizing film, the first interlayer insulating film covering the source lines and drain lines and the channel regions, the planarizing film covering the first interlayer insulating film;
• common electrode auxiliary wiring made of a portion of the metal film, including a common electrode auxiliary line overlying at least one of the source lines and a common electrode auxiliary line provided for at least one of the gate lines so as to be located close to this gate line and extend generally parallel thereto;
• a common electrode overlying at least a part of the common electrode auxiliary line and electrically connected with the common electrode auxiliary line;
• and
• a pixel electrode electrically connected with the drain connecting film in a second contact hole, the second contact hole being formed in a second interlayer insulating film that contacts the drain connecting film and being located inside the first contact hole,
• wherein the metal film is constructed such that a metal having a higher standard electrode potential than the pixel electrode or a metal having a standard electrode potential that differs from that of the pixel electrode by an amount in a predetermined range is included so as to contact the pixel electrode, and
• the common electrode auxiliary line supplies the common electrode with a potential that depends on an input signal.

A method of manufacturing a semiconductor apparatus including a thin-film transistor, comprising:

• (A) forming a thin-film transistor on a substrate, in which a gate layer including a gate line and a gate electrode, a gate insulating film covering the gate layer, and a semiconductor layer covering a portion of the gate insulating film are formed, and a source layer is formed on top of the semiconductor layer to form a source line including a source electrode and a drain line including a drain electrode;
• (B) forming a first interlayer insulating film covering the source layer and a planarizing film covering the first interlayer insulating film;
• (C) etching the first interlayer insulating film using the planarizing film as a mask to form a first contact hole, the first contact hole exposing a portion of the drain electrode;
• (D) forming a metal film on the planarizing film to form a drain connecting film that contacts the drain line in the first contact hole and form a common electrode auxiliary line that overlies a part of the source line;
• (E) forming a common electrode that covers the common electrode auxiliary line and stretches outside an area where the drain connecting film is present;
• (F) forming a second interlayer insulating film on top of the common electrode and the drain connecting film and etching the second interlayer insulating film to form a second contact hole inside the first contact hole, the second contact hole exposing a portion of the drain connecting film;
• and
• (G) forming on the second interlayer insulating film a pixel electrode that contacts the drain connecting film in the second contact hole,
• wherein the drain connecting film and the common electrode auxiliary line are constructed such that a metal having a higher standard electrode potential than the pixel electrode or a metal having a standard electrode potential that differs from that of the pixel electrode by an amount in a predetermined range is included so as to contact the pixel electrode.