Carrier-Depletion Based Silicon Waveguide Resonant Cavity Modulator With Integrated Optical Power Monitor
AssigneesUniversiteit Gent, Imec Vzw
InventorsYu Hui, Wim Bogaerts
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Abstract
A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.
Claims7
A carrier-depletion based silicon waveguide resonant cavity modulator comprising:
- a silicon waveguide based resonant cavity, wherein the resonant cavity includes an optical modulation section and an optical power monitoring section,
- wherein the optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density.
A method for fabricating a carrier-depletion based silicon waveguide resonant cavity modulator comprising a silicon waveguide based resonant cavity, wherein the resonant cavity includes an optical modulation section with an integrated lateral PN diode, and an optical power monitoring section with an integrated lateral PIN diode comprising a doping compensated I region, wherein the method comprises:
- performing a P-type implantation step using a first implantation window;
- and
- performing an N-type implantation step using a second implantation window,
- wherein an overlap is provided between the first implantation window and the second implantation window, thereby forming the doping compensated region at the locations of the overlap.
Dependencies are inferred from the claim text.