Semiconductor device, solid-state image sensor and camera system

A solid-state imaging device comprising:

• a pixel array unit including a plurality of pixels that perform photoelectric conversion;
• a plurality of pads located outside of the pixel array unit;
• a plurality of vias located at least between the pixel array unit and the plurality of pads, the plurality of vias including a first via and a second via;
• a first substrate;
• and
• a second substrate, wherein
• the pixel array unit is located between the first via and the second via, the first substrate and the second substrate are bonded to have a stacked structure, the first substrate and the second substrate are electrically connected through the plurality of vias, the first substrate includes the pixel array unit and the plurality of vias, and the second substrate includes a plurality of counters and a reference voltage generation circuit.