Solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorYoshitaka EGAWA
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Abstract
Provided is a solid-state imaging device which is capable of improving an image quality by changing a signal charge voltage conversion gain and performing a binning operation. According to one embodiment, a solid-state imaging device includes a pixel array unit including pixels that accumulate charges obtained by photoelectric conversion and are arranged in a row direction and a column direction in a form of a matrix and a switching transistor that is disposed between pixels and capable of changing a signal charge voltage conversion gain of a pixel and performing a binning operation.
Claims20
A solid-state imaging device, comprising:
- a pixel array unit including pixels that accumulate charges obtained by photoelectric conversion and are arranged in a row direction and a column direction,
- each of the pixels including
- a photo diode that generates charges by photoelectric conversion,
- a voltage converting unit that converts the charges generated by the photo diode into a voltage,
- a read transistor that reads the charges generated by the photo diode out to the voltage converting unit,
- an amplifying transistor that amplifies the voltage converted by the voltage converting unit, and
- a switching transistor that is connected between the voltage converting units of same color pixels disposed in the column direction.
Dependencies are inferred from the claim text.