A nonvolatile magnetic logic device

A nonvolatile magnetic logic device, comprising:

• a write path comprising:
• a plurality of write path terminals each comprising at least one of gold, silver, platinum, copper, tungsten, and aluminum;
• a write path magnetic layer comprising at least one of iron, cobalt, and nickel, the magnetic layer having a uniform magnetization direction that is indicative of a direction of magnetization of the magnetic layer in a steady state;
• wherein a logic state is written to the nonvolatile magnetic logic device by passing a current through the plurality of write path terminals;
• wherein the direction of magnetization of the write path magnetic layer represents the logic state of the nonvolatile magnetic logic device;
• and
• wherein the direction of magnetization is configured to be controlled by a direction of the current passed through the plurality of write path terminals;
• and
• a read path comprising:
• at least one magnetic tunnel junction (MTJ) comprising:
• a free layer having a switchable magnetization direction, the free layer comprising an alloy of iron, cobalt, and boron;
• a reference layer having a fixed magnetization direction, the reference layer comprising an alloy of iron, cobalt, and boron;
• and
• an insulating barrier layer between the free layer and the reference layer, the insulating barrier layer comprising at least one of magnesium oxide and aluminum oxide;
• a synthetic antiferromagnetic layer comprising sub-layers of alternating cobalt alloys and non-magnetic ruthenium spacers, wherein the synthetic antiferromagnetic layer pins the fixed magnetization direction of the reference layer;
• and
• a plurality of read path terminals for evaluation of the logic state,
• wherein each of the plurality of read path terminals comprises at least one of gold, silver, platinum, copper, tungsten, and aluminum;
• and
• an electrically insulating layer positioned between the write path and the read path, the electrically insulating layer comprising an oxide of at least one of iron, nickel, and cobalt, wherein the electrically insulating layer promotes electrical isolation between the read path and the write path and magnetic coupling of the read path to the write path, wherein the electrical isolation and the magnetic coupling enables the current to be passed through the plurality of write path terminals, while the logic state is evaluated among the plurality of read path terminals.

A method comprising:

• receiving, by a plurality of write path terminals of a write path of a nonvolatile magnetic logic device, a current that is used to write a logic state to the nonvolatile magnetic logic device;
• passing the current through the plurality of write path terminals of the write path to control a direction of magnetization of a magnetic layer of the write path, wherein the direction of magnetization is controlled by a direction of the current passing through the plurality of write path terminals and the magnetic layer, wherein the magnetic layer has a uniform magnetization direction that is indicative of the direction of magnetization, and wherein the direction of magnetization represents the logic state of the nonvolatile magnetic logic device;
• and
• providing, by a plurality of read path terminals of a read path of the nonvolatile magnetic logic device, a resistance corresponding to the logic state of the nonvolatile magnetic logic device for evaluation of the logic state;
• wherein the read path is electrically isolated from the write path and magnetically coupled to the write path, and wherein electrical isolation and magnetic coupling enable the current to be passed through the plurality of write path terminals, while the logic state is evaluated among the plurality of read path terminals.