Vertical-cavity surface-emitting laser

Abstract

Provided are a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate and including each of an N-type semiconductor contact layer, an N-type DBR layer, an active layer, a P-type semiconductor DBR layer, and a P-type semiconductor contact layer; an anode electrode connected to the P-type semiconductor contact layer; and a cathode electrode formed on a surface side of the base substrate and connected to the N-type semiconductor contact layer. The N-type DBR layer is formed of 15 or more pairs of layers with different compositions laminated on each other. Through this configuration, a vertical-cavity surface-emitting laser that can suppress an occurrence of a defect caused by crystal missing arising from the base substrate can be provided at reduced cost.

Dependencies are inferred from the claim text.