Semiconductor laser device and manufacturing method of the same
AssigneeSumitomo Electric Device Innovations, Inc.
InventorMasami ISHIURA
Life of this patent
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Abstract
A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
Claims17
A semiconductor laser device comprising:
- a first diffraction grating provided on a substrate along an optical waveguide direction;
- a second diffraction grating provided on the substrate continuous to one end of the first diffraction grating, the second diffraction grating being provided along the optical waveguide direction;
- and
- an active layer provided above the first diffraction grating, the active layer generating light with a wavelength determined by the first diffraction grating,
- wherein the second diffraction grating has a pitch 1.05 times of a pitch of the first diffraction grating or higher, or 0.95 times of the pitch of the first diffraction grating or lower.
A method to manufacture a semiconductor laser device, comprising steps of:
- forming a first diffraction grating and a second diffraction grating on a wafer continuously by a continuous electron beam exposure, the first diffraction grating having a pitch different from a pitch of the second diffraction grating;
- and
- forming an active layer above the first diffraction grating and the second diffraction grating.
A method to manufacture a semiconductor laser device comprising steps of:
- forming a third diffraction grating and a fourth diffraction grating continuous to the third diffraction grating on a wafer using an electron beam exposure, the third diffraction grating having a stripe width and the fourth diffraction grating having a width wider than the stripe width of the third diffraction grating;
- forming an active layer above the third diffraction grating and the fourth diffraction grating;
- and
- forming a mesa in a stripe shape by etching the third diffraction grating, the fourth diffraction grating and the active layer, the mesa in a portion corresponding to the third diffraction grating having a stripe width equal to or narrower than the stripe width in another portion corresponding to the third diffraction grating.
Dependencies are inferred from the claim text.