US 2015/0311470 A1Published application

Conductive support for an oled device, and oled device incorporating the same

OwnerDenis GUIMARD, Anne LELARGEinventors

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Abstract

A conductive support for an OLED, includes a dielectric sublayer, with an optical thickness L1 of greater than 20 nm and less than 180 nm, including a first crystalline contact layer based on zinc oxide, a first silver layer of less than 20 nm, a dielectric separating layer, with an optical thickness L2 of greater than 80 nm and less than 280 nm, including in this order a layer of zinc oxide with a thickness e2, directly on the first silver layer, an optional amorphous layer, based on tin zinc or indium zinc or indium zinc tin oxide with a thickness ei of less than 15 nm, a second layer of zinc oxide, with a thickness ec2, the sum of ec2+e2 being at least 30 nm, a second silver layer of less than 20 nm, a metal overblocker of less than 3 nm, a dielectric electrically conductive overlayer.

Claims17

Dependent claims

A conductive support for an organic light-emitting diode (OLED) device, comprising a transparent glass substrate bearing, on a first main face, a transparent electrode, which comprises the following stack of thin layers in this order:

a dielectric sublayer with a first optical thickness of greater than 20 nm and less than 180 nm, comprising
a first crystalline contact layer based on zinc oxide, and
a first metal layer, based on silver, with a thickness of less than 20 nm,
a dielectric separating layer, with a second optical thickness of greater than 80 nm and less than 280 nm, comprising, in this order
an additional crystalline layer based on zinc oxide with a thickness e2, directly on the first metal layer based on silver,
an optional amorphous intermediate layer based on tin zinc oxide or based on indium zinc oxide or based on indium zinc tin oxide, with a thickness ei of less than 15 nm,
a second crystalline contact layer based on zinc oxide, with a thickness ec2, the sum of the thicknesses ec2+e2 being at least 30 nm,
a second metal layer, based on silver, with a thickness of less than 20 nm,
an overblocker layer, directly on the second metal layer based on silver, which comprises a metal layer based on at least one of the following metals:
Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, W, with a thickness of less than 3 nm, and
an electrically conductive overlayer directly on the overblocker layer.

8 more elements

A process for manufacturing a conductive support for an organic light-emitting diode (OLED) device, comprising a transparent glass substrate bearing, on a first main face, a transparent electrode, the process comprising:

depositing over the first main face a dielectric sublayer with a first optical thickness of greater than 20 nm and less than 180 nm, comprising
a first crystalline contact layer based on zinc oxide, and
a first metal layer, based on silver, with a thickness of less than 20 nm,
depositing a dielectric separating layer, with a second optical thickness of greater than 80 nm and less than 280 nm, comprising, in this order
an additional crystalline layer based on zinc oxide, with a thickness e2, directly on the first metal layer based on silver,
an optional amorphous intermediate layer based on tin zinc oxide or based on indium zinc oxide or based on indium zinc tin oxide, with a thickness ei of less than 15 nm,
a second crystalline contact layer based on zinc oxide, with a thickness ec2, the sum of the thicknesses ec2+e2 being at least 30 nm,
depositing a second metal layer, based on silver, with a thickness of less than 20 nm, depositing an overblocker layer, directly on the second metal layer based on silver, which comprises a metal layer based on at least one of the following metals:
Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, W, with a thickness of less than 3 nm, and depositing an electrically conductive overlayer directly on the overblocker layer, wherein the additional layer deposited on the first silver metal layer based on silver is made of zinc oxide and is prepared by cathodic sputtering using a ceramic target of zinc oxide, with, during the deposition, an oxygen content of greater than or equal to 0% and less than 10% and a content of noble gas(es) of at least 90%,
wherein when the second crystalline contact layer is above the optional amorphous intermediate layer, the second crystalline contact layer is made of zinc oxide and is prepared by cathodic sputtering using a ceramic target of zinc oxide, with, during the deposition, an oxygen content of greater than or equal to 0% and less than 10% and a content of noble gas(es) of at least 90%,
wherein the first contact layer is prepared by cathodic sputtering using a ceramic target of zinc oxide, with, during the deposition, an oxygen content of greater than or equal to 0% and less than 10% and a content of noble gas(es) of at least 90%.

8 more elements

Dependencies are inferred from the claim text.