Thin film transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYUAN-HAO JIN, QUN-QING LI, SHOU-SHAN FAN
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Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconductor layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The semiconductor layer includes a carbon nanotube composite layer. The carbon nanotube composite layer includes a number of semiconductor particles and a plurality of carbon nanotubes.
Claims19
A thin film transistor, the thin film transistor comprising:
- an insulating layer comprising a first surface and a second surface, opposite to the first surface;
- a semiconductor layer located on the first surface of the insulating layer;
- a source electrode and a drain electrode spaced from each other and electrically connected to the semiconductor layer;
- and
- a gate electrode located on the second surface of the insulating layer;
- wherein the semiconductor layer comprises a carbon nanotube composite layer, the carbon nanotube composite layer comprise a plurality of carbon nanotubes and a plurality of semiconductor particles, the plurality of semiconductor particles are dispersed into the plurality of carbon nanotubes, each of the plurality of semiconductor particles comprise a semiconductor fragment, the semiconductor fragment comprises a plurality of semiconductor molecular layers stacked together, a number of the plurality of semiconductor molecular layers ranges from about 1 to about 20, an area of the semiconductor fragment ranges from about 0.1 square micrometers to about 5 square micrometers, and a thickness of the semiconductor fragment ranges from about 2 nanometers to about 20 nanometers.
A thin film transistor, the thin film transistor comprising:
- an insulating layer comprising a first surface and a second surface, opposite to the first surface;
- a semiconductor layer located on the first surface of the insulating layer;
- a source electrode and a drain electrode spaced from each other and electrically connected to the semiconductor layer;
- and
- a gate electrode located on the second surface of the insulating layer;
- wherein the semiconductor layer comprises a carbon nanotube composite layer, the carbon nanotube composite layer comprise a plurality of carbon nanotubes and a plurality of semiconductor particles, the plurality of carbon nanotubes and the plurality of semiconductor particles form a conductive network, and a distribution density of the plurality of semiconductor particles ranges from about 5 per square micrometers to about 10 per square micrometers.
Dependencies are inferred from the claim text.