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US 2015/0311457 A1Published application
Forming pn junction contacts by different dielectrics
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Shu-jen Han
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Abstract
A carbon nanotube transistor and method of manufacturing a carbon nanotube transistor is disclosed. The carbon nanotube transistor includes a carbon nanotube on a substrate, a gate electrode deposited on the carbon nanotube, and at least one of a source electrode and a drain electrode deposited on the carbon nanotube and separated from the gate electrode by a space region. The carbon nanotube is doped at the gate electrode an in the space region to form a p-n junction.
Claims7
A method of making a carbon nanotube transistor, comprising:
- depositing a carbon nanotube on a substrate;
- depositing a gate material in a gate region;
- depositing at least one of a source electrode and a drain electrode on the carbon nanotube separated from the gate region by a space region;
- and
- doping the carbon nanotube in the gate region and in the space region to form a p-n junction along the carbon nanotube.
2 more elements
Dependencies are inferred from the claim text.