Method for forming pattern and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device using a high-molecular block copolymer including a first and a second polymer, the method comprising:

• forming a guide layer on a substrate, the guide layer including a first and a second region disposed on the substrate, widths of the first and second region respectively being approximately (d/2)×n and (d/2)×m, both of the first and second region being to be pinned with none of the first and second polymer, and surface energies of the first and second region being different from one another, where n, m:
• odd number, and d:
• a phase-separation cycle of the high-molecular block copolymer;
• forming a copolymer layer of the high-molecular block copolymer on the guide layer;
• forming a phase-separation structure with the phase-separation cycle d by self-assembling the copolymer layer;
• etching one of the first and second polymer of the self-assembled copolymer layer;
• and
• etching the substrate with using the etched copolymer layer as a mask.