Method of fabricating semiconductor device

A method of fabricating a semiconductor device, comprising:

• forming semiconductor patterns on a semiconductor substrate, such that sides of the semiconductor patterns surrounded by a lower interlayer insulating layer;
• forming a lower insulating layer that covers the semiconductor patterns and the lower interlayer insulating layer;
• forming a contact structure that penetrates the lower insulating layer and the lower interlayer insulating layer and is spaced apart from the semiconductor patterns;
• forming an upper insulating layer that covers the contact structure and the lower insulating layer;
• patterning the upper and lower insulating layers to form insulating patterns that expose the semiconductor patterns and cover the contact structure, the insulating patterns including a first insulating pattern between the semiconductor patterns, and the insulating patterns including a second insulating pattern on the contact structure, the first insulating pattern including a first lower insulating pattern and a first upper insulating pattern sequentially stacked, and the second insulating pattern including a second lower insulating pattern and a second upper insulating pattern sequentially stacked;
• forming metal-semiconductor compounds on the exposed semiconductor patterns after forming the insulating patterns;
• forming lower electrodes on the metal-semiconductor compounds;
• and
• forming data storage patterns on the lower electrodes.