Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, John A. Smythe
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Abstract
A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
Claims22
A method of forming a memory cell material, comprising:
- forming a first portion of a dielectric material over a substrate by atomic layer deposition;
- forming discrete conductive particles on the first portion of the dielectric material by atomic layer deposition;
- and
- forming a second portion of the dielectric material on and between the discrete conductive particles by atomic layer deposition.
A method of forming a semiconductor device structure, comprising:
- forming a memory cell material on a substrate by atomic layer deposition to comprise discrete conductive particles interposed between at least two vertically adjacent portions of a dielectric material.
-34. (canceled)
Dependencies are inferred from the claim text.