Switching device structures and methods
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
Life of this patent
Estimating the term…
Abstract
Switching device structures and methods are described herein. A switching device can include a vertical stack comprising a material formed between a first and a second electrode. The switching device can further include a third electrode coupled to the vertical stack and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode, wherein the formation state of the conductive pathway is switchable between an on state and an off state.
Claims21
1-20. (canceled)
A switching device, comprising:
- a vertical stack comprising a material formed between a first and a second electrode;
- and
- a third electrode formed between the first and the second electrode, formed inside of the material, coupled to the vertical stack, and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode;
- wherein the formation state of the conductive pathway is switchable between an on state and an off state.
A memory cell, comprising:
- a storage element;
- a switching device coupled in series with the storage element, the switching device comprising:
- a vertical stack comprising a material formed between a first and a second electrode;
- and
- a third electrode formed between the first and the second electrode, formed inside of the material, coupled to the vertical stack, and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode;
- wherein the formation state of the conductive pathway is switchable between an on state and an off state.
A method of forming a conductive pathway, comprising:
- forming a vertical stack comprising a first electrode, a second electrode, a third electrode, and a resistance variable material between the first and second electrode,
- wherein the second electrode is formed between the first and the third electrode and formed inside of the resistant variable material;
- applying a first voltage to the first electrode;
- and
- applying a second voltage to the second electrode, wherein the second voltage is greater than the first voltage,
- wherein application of the first and second voltages cause formation of a conductive pathway between the first and third electrodes via ion movement.
Dependencies are inferred from the claim text.