Method for fabricating a magnetoresistive device
AssigneesNational University of Singapore, Yonsei University
InventorsLi Ming Loong, Hyunsoo Yang, Wonho Lee, Jong-Hyun Ahn, Charanjit Singh Bhatia
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Abstract
Embodiments of the invention provide a method for fabricating a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure such that the magnetic and/or magnetoresistive properties of the magnetoresistive device can be improved. The magnetic and/or magnetoresistive properties include, but are not limited to coercivity, squareness or abruptness of switching, magnetoresistance (MR) and resistance of the magnetoresistive device.
Claims20
A method for fabricating a magnetoresistive device, comprising:
- releasing a multi-layer magnetoresistive structure which is to be used for forming the magnetoresistive device, from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure to improve magnetic and/or magnetoresistive properties of the magnetoresistive device.
Dependencies are inferred from the claim text.