Semiconductor device, magnetic memory device, and method of fabricating the same

A method of fabricating a magnetic memory device, the method comprising:

• preparing a substrate with a cell array region and a peripheral circuit region;
• forming conductive pillars on the cell array region;
• sequentially forming a sacrificial layer and a molding structure on the conductive pillars;
• forming a conductive layer on the molding structure;
• removing the sacrificial layer to form an air gap between the conductive pillars;
• performing a first patterning process using a mask pattern covering the cell array region and exposing the peripheral circuit region to expose the molding structure;
• removing the molding structure exposed through a boundary between the cell array region and the peripheral circuit region to form an expanded air gap;
• and
• performing a second patterning process on the conductive layer to open the expanded air gap.

A method of fabricating a semiconductor device, the method comprising:

• forming conductive pillars on a substrate;
• sequentially forming a sacrificial layer and a molding structure between the conductive pillars;
• forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars;
• removing the sacrificial layer, such that an air gap is formed between adjacent conductive pillars;
• removing the molding structure, such that an expanded air gap is formed between the adjacent conductive pillars;
• and
• patterning the conductive layer to form conductive patterns on respective conductive pillars, such that a space between the conductive patterns is in fluid communication with the expanded air gap.