Process for producing magnetoresistive effect element
AssigneeCanon Anelva Corporation
InventorsYukito NAKAGAWA, Yoshimitsu KODAIRA, Motozo KURITA, Takashi NAKAGAWA
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Abstract
This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.
Claims14
A process for producing a magnetoresistive effect element having two ferromagnetic layers and a tunnel barrier layer located between the two ferromagnetic layers, the process comprising a step of applying an ion beam to a metal material adhered to the side wall of the tunnel barrier layer,
- wherein the ion beam is formed using a plasma of a Kr gas or a Xe gas.
Dependencies are inferred from the claim text.