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US 2015/0311430 A1Published application
Magnetoresistive sensor
AssigneeSeagate Technology LLC
InventorsEric W. Singleton, Liwen Tan, Jae-Young Yi, Konstantin Nikolaev
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Abstract
Implementations disclosed herein provide a magnetoresistive (MR) sensor including a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer made of an alloyed layer including a ferromagnetic material and a refractory material. An implementation of the MR sensor further includes a cap layer adjacent to the second layer wherein the cap layer does not include any tantalum.
Claims20
A magnetoresistive (MR) sensor comprising:
- a barrier layer;
- and
- a free layer (FL) comprising a first layer (FL1) of CoFeB or CoFe/CoFeB adjacent to a barrier layer and a second layer (FL2) including a ferromagnetic material and a refractory material (X).
A magnetoresistive (MR) sensor comprising:
- a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer including a ferromagnetic material and a refractory material;
- and
- a cap layer adjacent the second layer, wherein the cap layer does not include any tantalum or any tantalum alloy.
A magnetoresistive (MR) sensor comprising:
- a barrier layer;
- a cap layer;
- and
- a free layer structure including first and second ferromagnetic layers adjacent to each other, wherein the first ferromagnetic layer is adjacent to the barrier layer and the second ferromagnetic layer is adjacent to the cap layer.
1 more element
Dependencies are inferred from the claim text.