Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

A non-transitory computer-readable medium configured to cause a lithographic device to perform a method for fabricating a magnetic tunnel junction, where the method comprises:

• forming a bottom electrode on a substrate;
• forming a pin layer on the bottom electrode;
• forming a barrier layer on the pin layer;
• forming a free layer on the barrier layer;
• etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode;
• forming a top electrode on the free layer;
• forming a hardmask layer on the top electrode;
• and
• etching the hardmask layer, the top electrode, the pin layer, and the bottom electrode.

An apparatus, comprising:

• a magnetic tunnel junction, including:
• a bottom electrode on a substrate;
• a pin layer on the bottom electrode;
• a barrier layer on the pin layer;
• a free layer on the barrier layer;
• a top electrode on the free layer;
• and
• an insulating cap film seal formed adjacent to the top electrode, the free layer, the barrier layer, and the pin layer.

A method for fabricating a magnetic tunnel junction, comprising:

• a step for forming a bottom electrode on a substrate;
• a step for forming a pin layer on the bottom electrode;
• a step for forming a barrier layer on the pin layer;
• a step for forming a free layer on the barrier layer;
• a step for etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode;
• a step for forming a top electrode on the free layer;
• a step for forming a hardmask layer on the top electrode;
• and
• a step for etching the hardmask layer, the top electrode, the pin layer, and the bottom electrode.