Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component

An optoelectronic semiconductor component comprising:

• a carrier;
• a semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier and wherein the semiconductor chip has a plurality of individually activatable elements capable of generating primary radiation;
• and
• a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein the wavelength conversion element is arranged downstream from the semiconductor chip in a emission direction and wherein the wavelength conversion element is structured into partial regions, at least one individually activatable element of the semiconductor chip being associated with each partial region of the wavelength conversion element.

A method for producing an optoelectronic semiconductor component, the method comprising:

• providing a carrier;
• arranging a semiconductor chip on the carrier, wherein the semiconductor chip has two or more individually activatable elements;
• providing a plate made of converter material;
• structuring the plate to a wavelength conversion element that includes a trench, wherein the wavelength conversion element is structured into partial regions;
• filling the trench with a non-transparent filling material;
• and
• arranging the wavelength conversion element on the semiconductor chip after the structuring, wherein at least one individually activatable element of the semiconductor chip is associated with each partial region of the wavelength conversion element.

An optoelectronic semiconductor component comprising:

• a carrier;
• a semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable elements;
• and
• a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation;
• wherein the wavelength conversion element is arranged downstream from the semiconductor chip in an emission direction;
• wherein each of the elements is capable of generating the primary radiation;
• wherein the wavelength conversion element is structured into partial regions;
• wherein at least one individually activatable element of the semiconductor chip is associated with each partial region of the wavelength conversion element;
• wherein the wavelength conversion element is implemented in one piece;
• wherein the wavelength conversion element has a plurality of trenches;
• wherein the trenches are filled with a filling material;
• and
• wherein the filling material is a non-transparent material.