Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device
AssigneeCanon Anelva Corporation
InventorYoshiaki Daigo
Life of this patent
Estimating the term…
Abstract
An object of the present invention is to provide a film formation technique having high productivity by realizing a foundation layer having excellent crystallinity with a small film thickness of about 2 μm. An embodiment of the present invention relates to a film forming method which includes the step of forming a buffer layer by sputtering on a sapphire substrate held by a substrate holder. The buffer layer includes an epitaxial film having a wurtzite structure prepared by adding at least one substance selected from the group consisting of C, Si, Ge, Mg, Zn, Mn, and Cr to AlxGa1-xN (where 0≦x≦1).
Claims8
A film forming method comprising the steps of:
- mounting a sapphire substrate on a substrate holder;
- and
- forming a buffer layer by sputtering on the sapphire substrate, the buffer layer including an epitaxial film having a wurtzite structure prepared by adding at least one substance selected from a group consisting of C, Si, Ge, Mg, Zn, Mn, and Cr to AlxGa1-xN, wherein 0≦x≦1.
Dependencies are inferred from the claim text.