Nitride Light Emitting Diode and Fabrication Method Thereof

A nitride light-emitting diode fabrication method, comprising:

• providing a substrate having a surface with sub-micro patterns, including a growth region and a non-growth region;
• forming a growth blocking layer in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate;
• growing a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer, and a p-type layer in the growth region of the substrate, extending to the non-growth region through lateral epitaxy and covering the growth blocking layer;
• wherein a refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer, and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thereby increasing a light extraction interface of light-emitting diode, generating a refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.

A lighting or display system, comprising a plurality of light-emitting diodes, each light-emitting diode comprising:

• a substrate having a surface with sub-micro patterns, including a growth region and a non-growth region;
• a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate;
• a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer, and a p-type layer, formed in the growth region of the substrate, extending to the non-growth region through lateral epitaxy and covering the growth blocking layer;
• wherein, a refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer, and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thereby increasing a light extraction interface of light-emitting diode and generating a refractive index difference between the light-emitting epitaxial layer and the light extraction interface.