Nitride semiconductor element and method for manufacturing the same
AssigneeNichia Corporation
InventorTomohiro SHIMOOKA
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Abstract
A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.
Claims10
A method of manufacturing a nitride semiconductor element, the method comprising:
- dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface;
- wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection;
- and
- growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.
A method of manufacturing a nitride semiconductor element, the method comprising:
- preparing a sapphire substrate with a plurality of projections formed on a surface of the sapphire substrate at a c-plane side thereof, each of the projections having a circular bottom surface and an upper part in a triangular pyramid shape, a ridge line of the triangular pyramid shape extending in a direction of an m-axis in a top view;
- and
- growing a semiconductor layer made of a nitride semiconductor on the surface of the sapphire substrate.
A nitride semiconductor element comprising:
- a sapphire substrate with a plurality of projections disposed on a surface thereof at a c-plane side;
- and
- a semiconductor layer made of a nitride semiconductor and disposed on the surface of the sapphire substrate, wherein
- each projection has a circular bottom surface, and an upper part in a triangular pyramid shape, and
- each ridge line of the triangular pyramid shape extends in a direction of an m-axis in a top view.
Dependencies are inferred from the claim text.