US 2015/0311387 A1 · CHIP WITH ENHANCED LIGHT EXTRACTION

Abstract

Described herein are devices and methods incorporating light extraction features for improving light extraction in light emitting diode (LED) chips, for example, thin-film semiconductor LED chips such as thin film GaN chips. These features can be located in the semiconductor diode region of an LED chip and are configured to improve device light extraction by redirecting light emitted by the chip's active region. In some embodiments, the light extraction features can comprise a material with a refractive index lower than the surrounding semiconductor material. In some embodiments, the light extraction features are shaped to improve light extraction and can be formed as protrusions, indentations and can comprise various features such as sloped sidewalls. Also disclosed herein are contact configurations for improving electrical conductivity in the disclosed devices.

Claims35

Dependent claims

A light emitting diode (LED) chip, comprising:

a semiconductor material based diode region comprising an active region;
and
one or more light extraction features within said diode region, said one or more light extraction features dissecting 40% or greater of the thickness of said diode region and configured to redirect light emitted from said active region to improve light extraction from an emission surface of said LED chip.

Dependencies are inferred from the claim text.

Chip with enhanced light extraction

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Chip with enhanced light extraction

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Abstract

Claims35