Semiconductor device and method of fabricating the same
AssigneeSeoul Viosys Co., Ltd.
InventorsJeong Hun HEO, Yeo Jin Yoon, Joo Won Choi, Joon Hee Lee, Chang Yeon Kim, Su Young Lee
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Abstract
A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Claims15
A method of fabricating a semiconductor device, the method comprising:
- forming an insulation pattern comprising a mask region and an open region on a gallium nitride substrate;
- growing gallium nitride semiconductor layers to cover the insulation pattern;
- and
- patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
A method of fabricating a semiconductor device comprising a growth substrate and a gallium nitride semiconductor stack spaced apart from the growth substrate, the method comprising:
- forming a sacrificial layer and a mask pattern on the growth substrate, the mask pattern comprising a mask region and an open region, the sacrificial layer being exposed to the open region of the mask pattern;
- etching the sacrificial layer by electrochemical etching (ECE);
- and
- growing the gallium nitride semiconductor stack to cover the mask pattern.
Dependencies are inferred from the claim text.