Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same
AssigneeSeoul Viosys Co., Ltd.
InventorsKyung Hae Kim, Jung Whan Jung
Life of this patent
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Abstract
A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.
Claims17
A light emitting device comprising:
- an n-type nitride semiconductor layer;
- an active layer disposed over the n-type nitride semiconductor layer;
- and
- a p-type nitride semiconductor layer disposed over the active layer,
- the n-type nitride semiconductor layer comprising:
- an n-type nitride base layer;
- a first intermediate layer disposed over the n-type nitride base layer;
- an n-type modulation-doped layer disposed over the first intermediate layer;
- and
- a second intermediate layer disposed over the n-type modulation-doped layer;
- wherein the second intermediate layer includes a sub-layer having a higher n-type doping concentration than an n-type doping concentration of the n-type modulation-doped layer.
A light emitting device, including:
- a first-impurity nitride-based layer formed over a substrate and having a relatively low doping concentration;
- a first intermediate layer formed over the first-impurity nitride-based layer and having a different composition than that of the n-type nitride-based layer;
- a first-impurity modulation-doped layer formed over the first intermediate layer and having a non-exposed portion and an exposed portion that have different impurity concentrations from each other;
- and
- a second intermediate layer formed over the exposed portion of the first-impurity modulation-doped layer and including first sub-intermediate layers and second sub-intermediate layers that are alternately disposed relative to each other, the first sub-intermediate layers having a different impurity concentration from the second sub-intermediate layers, and
- wherein the exposed portion of the first-impurity modulation-doped layer and the second intermediate layer form a mesa structure together with an active layer and a second-impurity nitride semiconductor layer that are formed over the second intermediate layer.
Dependencies are inferred from the claim text.