Transparent-conductive-film laminate, manufacturing method therefor, thin-film solar cell, and manufacturing method therefor

A thin-film solar cell, including:

• a translucent substrate;
• and
• a transparent-conductive-film laminate, a photoelectric conversion layer unit, and a back surface electrode layer formed in that order on the translucent substrate,
• wherein the transparent-conductive-film laminate
• has a structure including:
• an indium-oxide-based transparent conductive film (I) with a surface roughness (Ra) of not more than 1.0 nm formed on the translucent substrate;
• and a zinc-oxide-based transparent conductive film (II) formed on said indium-oxide-based transparent conductive film (I), and
• has, as a laminate, a surface roughness (Ra) of not less than 30 nm, a haze ratio of not less than 8%, and a resistance value of not more than 30 Ω/sq., and has an average absorptivity with respect to light in a wavelength range of 400 nm to 1200 nm of not more than 15%.

A manufacturing method for a thin-film solar cell,

• the thin-film solar cell including:
• a translucent substrate;
• and
• a transparent-conductive-film laminate, a photoelectric conversion layer unit, and a back surface electrode layer formed in that order on the translucent substrate,
• wherein the transparent-conductive-film laminate is formed by a transparent-conductive-film laminate formation step, the transparent-conductive-film laminate formation step including:
• a first deposition step of forming an indium-oxide-based transparent conductive film (I) having a film thickness of not less than 10 nm and not more than 300 nm on the translucent substrate by a sputtering method under conditions of a gas pressure of not less than 0.1 Pa and not more than 2.0 Pa and a substrate temperature of not more than 50° C.;
• and
• a second deposition step of forming a zinc-oxide-based transparent conductive film (II) having a film thickness of not less than 200 nm and not more than 1000 inn on the indium-oxide-based transparent conductive film (I) by a sputtering method under conditions of a gas pressure of not less than 0.1 Pa and not more than 2.0 Pa and a substrate temperature of not less than 200° C. and not more than 450° C.