Solar cell contact formation using laser ablation
AssigneeSunPower Corporation
InventorsGabriel HARLEY, David D. SMITH, Peter John COUSINS
Life of this patent
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Abstract
The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.
Claims20
A method of fabricating a solar cell, the method comprising:
- forming a first dielectric layer over a silicon substrate;
- forming an absorbing layer over the first dielectric layer;
- forming a second dielectric layer over the absorbing layer;
- forming, by laser processing, a plurality of contact holes through the second dielectric layer and the absorbing layer;
- and
- forming conductive contacts in the plurality of contact holes.
A method of fabricating a solar cell, the method comprising:
- forming a poly-crystalline layer over a silicon substrate;
- forming a first silicon dioxide layer directly on the poly-crystalline layer;
- forming an absorbing layer directly on the first silicon dioxide layer;
- forming, by laser processing, a plurality of contact holes through the silicon dioxide layer and the absorbing layer;
- and
- forming conductive contacts in the plurality of contact holes.
A method of fabricating a solar cell, the method comprising:
- a first dielectric layer over a silicon substrate;
- forming a poly-crystalline layer over the first dielectric layer;
- forming an absorbing layer over the poly-crystalline layer;
- forming, by laser processing, a plurality of contact holes through the absorbing layer;
- and
- forming conductive contacts in the plurality of contact holes.
Dependencies are inferred from the claim text.