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US 2015/0311355 A1Published application
Thermally-insulated micro-fabricated atomic clock structure and method of forming the atomic clock structure
AssigneeTexas Instruments Incorporated
InventorsPeter J. Hopper, William French, Paul Mawson, Steven Hunt, Roozbeh Parsa, Martin Fallon, Ann Gabrys, Andrei Papou
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Abstract
A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to −40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell.
Claims1
A method of forming a semiconductor structure comprising:
- forming a photodiode die including:
- forming a substrate having a conductivity type, a device surface, and a non-device surface;
- forming a number of circuit elements that lie within the substrate;
- and
- forming a metal interconnect structure having:
- a first non-conductive layer that touches the device surface of the substrate;
- a plurality of contacts that extend through the first non-conductive layer to make electrical connections to the number of circuit elements;
- a plurality of metal-1 traces that touch the first non-conductive layer and the plurality of contacts;
- a second non-conductive layer that touches the first non-conductive layer and the plurality of metal-1 traces;
- a plurality of vias that extend through the second non-conductive layer to make electrical connections to the number of metal-1 traces;
- and
- a plurality of metal-2 traces that touch the second non-conductive layer and the plurality of vias, the plurality of metal-2 traces having a thermal conductivity that is greater than a thermal conductivity of the metal-1 traces.
9 more elements
Dependencies are inferred from the claim text.