Semiconductor Device And Method For Manufacturing The Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.
Claims20
(canceled)
A semiconductor device comprising:
- a first gate electrode over a substrate;
- a first metal oxide film comprising gallium oxide over the first gate electrode;
- an oxide semiconductor layer comprising indium, gallium and zinc over the first metal oxide film;
- a source electrode and a drain electrode over and electrically connected to the oxide semiconductor layer;
- a second metal oxide film comprising gallium oxide over the oxide semiconductor layer, the source electrode, and the drain electrode;
- and
- a second gate electrode over the second metal oxide film.
A semiconductor device comprising:
- a first gate electrode over a substrate;
- a first metal oxide film comprising gallium oxide over the first gate electrode;
- an oxide semiconductor layer comprising indium, gallium and zinc over the first metal oxide film;
- a source electrode and a drain electrode over and electrically connected to the oxide semiconductor layer;
- a second metal oxide film comprising gallium oxide over the oxide semiconductor layer, the source electrode, and the drain electrode;
- and
- a second gate electrode over the second metal oxide film,
- wherein the first metal oxide film and the second metal oxide film are in contact with each other.
A semiconductor device comprising:
- a first gate electrode over a substrate;
- a film comprising hafnium oxide over the first gate electrode;
- a first metal oxide film comprising gallium oxide over the film comprising hafnium oxide;
- an oxide semiconductor layer comprising indium, gallium and zinc over the first metal oxide film;
- a source electrode and a drain electrode over and electrically connected to the oxide semiconductor layer;
- a second metal oxide film comprising gallium oxide over the oxide semiconductor layer, the source electrode, and the drain electrode;
- and
- a second gate electrode over the second metal oxide film.
Dependencies are inferred from the claim text.