Loading patent…
AssigneeBoe Technology Group Co., Ltd.
InventorCe Zhao
Estimating the term…
The present invention provides a thin film transistor, a fabricating method thereof, a display substrate and a display device. In the fabricating method, a protective layer and an oxide active layer are patterned by one patterning process, to form patterns of the protective layer and the oxide active layer; and annealing is performed in an oxygen-containing atmosphere, so that the material of the oxide active layer diffuses into the protective layer through a contact surface between the oxide active layer and the protective layer, to form a transitional region in the protective layer, and the material of the protective layer diffuses into the oxide active layer through the contact surface, to form a transitional region in the oxide active layer, the transitional regions are configured to reduce an off-state current of the thin film transistor.
1-20. (canceled)
A fabricating method of a thin film transistor, comprising steps of:
A thin film transistor, comprising an oxide active layer, a protective layer provided on the oxide active layer and source and drain electrodes, wherein the protective layer comprises tin oxide-based material, a part of the oxide active layer in contact with the protective layer comprises a transitional region, and a part of the protective layer in contact with the oxide active layer comprises a transitional region, the transitional regions are configured to reduce an off-state current of the thin film transistor.
A display device, comprising a display substrate, the display substrate comprising thin film transistors, the thin film transistor comprising an oxide active layer, a protective layer provided on the oxide active layer and source and drain electrodes, wherein
Dependencies are inferred from the claim text.