Finfet with esd protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWUN-JIE LIN, YU-TI SU, LI-WEI CHU, BO-TING CHEN
Life of this patent
Estimating the term…
Abstract
In some embodiments, a field effect transistor structure includes a substrate, a fin structure and a gate structure. The fin structure is formed over the substrate. The fin structure includes a first channel region, a first source or drain region and a second source or drain region. The first source or drain region and the second source or drain region are formed on opposite ends of the first channel region, respectively. The well region is formed of the same conductivity type as the second source or drain region, connected to the second source or drain region, and extended to the substrate. The first gate structure wraps around the first channel region in the fin structure.
Claims27
A field effect transistor (FET) structure, comprising:
- a substrate;
- a fin structure formed over the substrate, wherein the fin structure comprises:
- a first channel region;
- a first source or drain region and a second source or drain region formed on opposite ends of the first channel region, respectively;
- and
- a well region formed of the same conductivity type as the second source or drain region, connected to the second source or drain region, and extended to the substrate;
- and
- a first gate structure wrapping around the first channel region in the fin structure.
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
A field effect transistor (FET) structure, comprising:
- a body region abutting a well region of an opposite conductivity type to the body region, wherein each of the body region and the well region comprises:
- a first portion having at least one width smaller than a first width;
- and
- a second portion having the first width;
- a first source or drain region and a second source or drain region embedded into the first portions of the body region and the well region;
- a first gate structure that wraps around the first portion of the body region between the first source or drain region and the second source or drain region.
A field effect transistor (FET) structure, comprising:
- a substrate;
- a fin structure formed over the substrate, wherein the fin structure comprises:
- a first body region comprising a first channel region;
- a first source or drain region and a second source or drain region formed on opposite ends of the first channel region, respectively;
- and
- a well region formed of the same conductivity type as the second source or drain region,
- wherein
- the first body region is connected to the first source or drain region and the second source or drain region, and
- the well region abuts the first body region and is connected to the second source or drain region;
- and
- a first gate structure wrapping around the first channel region in the fin structure.
Dependencies are inferred from the claim text.